µ PA1915
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = –20 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off) VDS = –10 V, ID = –1 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –2.5 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –4.5 V, ID = –2.5 A
RDS(on)2 VGS = –4.0 V, ID = –2.5 A
RDS(on)3 VGS = –2.7 V, ID = –2.5 A
RDS(on)4 VGS = –2.5 V, ID = –2.5 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = –10 V
Rise Time
tr
ID = –2.5 A
Turn-off Delay Time
td(off)
VGS(on) = –4.0 V
Fall Time
tf
RG = 10 Ω
Total Gate Charge
QG
VDD = –16 V
Gate to Source Charge
QGS ID = –4.5 A
Gate to Drain Charge
QGD
VGS = –4.0 V
Diode Forward Voltage
VF(S-D) IF = 4.5 A, VGS = 0 V
MIN. TYP. MAX. UNIT
–10 µA
±10 µA
–0.5 –1.1 –1.5 V
3
8.8
S
45 55 mΩ
47 58 mΩ
61 82 mΩ
67 90 mΩ
820
pF
210
pF
100
pF
16
ns
14
ns
58
ns
46
ns
5.0
nC
2.0
nC
2.5
nC
0.86
V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1µs
Duty Cycle ≤ 1 %
RL
VDD
VGS(−)
VGS
Wave Form
10 %
0
VGS(on) 90 %
VDS(−)
90 %
VDS
VDS
0
Wave Form
td(on)
10 % 10 %
tr td(off)
90 %
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G14761EJ2V0DS