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STK760-213A-E 查看數據表(PDF) - ON Semiconductor

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STK760-213A-E Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
STK760-213A-E
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
IGBT
Collector-emitter voltage
(TR1+TR2) Repetitive peak collector current
VCE
ICP
600
*1
300
Collector current
IC
105
Power dissipation
PC1
156
FRD1
(D1)
Diode reverse voltage
Repetitive peak forward current
VRM
IF1P
600
*1
110
Diode forward current
IF1
36
Power dissipation
PD1
75
FRD2
(D2)
Repetitive peak forward current
Diode forward current
IF2P
IF2
*1
15
7
Power dissipation
PD2
13
Supply voltage (VCC-GND)
Signal pin input voltage
Pin 4
VCC
VIS
20
-10 to 0.3
Pin 5
VCOMP
Pin 8
VFB
-0.3 to 6.5
Pin 9
VOVP
Pin 2
Pin 6
VONF
Vctl
-0.3 to VCC
Maximum input AC voltage
VAC
Single-phase Full-rectified
264
Maximum output voltage
VO
Under the Application condition
450
Maximum output power
Wo
(VAC=200V)
6
Input AC current (normal condition)
IIN
30
Junction temperature
Tj
150
Operating case temperature
Tc
HIC case temperature
*2
-20 to +100
Storage temperature
Tstg
-40 to +125
Tightening torque
A screw part
*3
1.17
Withstand voltage
VINS
50Hz sine wave AC 1minute
*4
2000
[Note]
*1: Duty ratio D = 0.1, tp = 1ms
*2: Measure point is between 5mm to center of back.
*3: Torque should be set within 0.79 to 1.17Nm. Flatness of the heat-sink should be lower than 0.2mm.
*4: The test condition: AC2500V, 1 second.
unit
V
A
A
W
V
A
A
W
A
A
W
V
V
V
V
kW
Arms
°C
°C
°C
Nm
VRMS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
No.A1790-2/11

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