MMBTH11(1997) 查看數據表（PDF） - Fairchild Semiconductor

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MMBTH11
(Rev.:1997)

NPN RF Transistor

Fairchild Semiconductor 

Test Circuits (continued)

NPN RF Transistor

(continued)

50 Ω

Input

0.002 µF

2.2 KΩ

1/2 W

T1

4.0-30 pF

2KΩ

1000 pF

R.F. Beads

1000 pF

390 Ω

1/2 W

1000 pF

270 Ω

1/2 W

V = 12 V

CC

VAGC

FIGURE 2: 45 MHz Power Gain Circuit

50 Ω

Output

} T1 - Q3 Toroid 4:1 ratio

8 turns Pri. 2 turns Sec.

No. 22 wire

200 mHz Output

into 50Ω

RFin

LOin

245 mHz

Output into

50 Ω

300 pF

2.0 pF

L1

1000 pF

47 KΩ

VBB

1.1 pF

T1

20pF

45 mHz Output

into 50Ω

1000 pF

VCE

V = 15 V

CE

L1 - Ohmite RFC Z235

T1 - Primary 5 turns No. 34 wire 1/4 inch

diameter. Secondary runs No. 34 wire closer

wound over a Q100 core (10.7 mHz). When

terminated onm secondary side with 50Ω

primary measures 1.5 K, -25 pF.

FIGURE 3: 200 MHz Conversion Gain Test Circuit

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