AO3418L 查看數據表（PDF） - Kersemi Electronic Co., Ltd.

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AO3418L

N-Channel Enhancement Mode Field Effect Transistor

Kersemi Electronic Co., Ltd. 

Features

VDS (V) = 30V

ID = 3.8 A

RDS(ON) < 60mΩ (VGS = 10V)

RDS(ON) < 70mΩ (VGS = 4.5V)

RDS(ON) < 155mΩ (VGS = 2.5V)

AO3418, AO3418L ( Green Product )

N-Channel Enhancement Mode Field Effect Transistor

TO-236 Top View

(SOT-23)

General Description

The AO3418 uses advanced trench technology to

provide excellent RDS(ON), very low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. AO3418L ( Green Product ) is offered in

a lead-free package.

G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

30

±12

3.8

3.1

15

1.4

0.9

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

70

100

Maximum Junction-to-Lead C

Steady-State

RθJL

63

Max

90

125

80

D

S

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

2014-5-29

1

www.kersemi.com

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