MCH3478 查看數據表（PDF） - ON Semiconductor

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MCH3478

N-Channel Power MOSFET

ON Semiconductor 

MCH3478

Electrical Characteristics at Ta=25°C

Parameter

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain to Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=1mA, VGS=0V

VDS=30V, VGS=0V

VGS=±8V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=1A

ID=1A, VGS=4.5V

ID=0.5A, VGS=2.5V

ID=0.3A, VGS=1.8V

VDS=10V, f=1MHz

See specified Test Circuit.

VDS=10V, VGS=4.5V, ID=2A

IS=2A, VGS=0V

Switching Time Test Circuit

VIN

4.5V

0V

PW=10μs

D.C.≤1%

VIN

G

VDD=15V

ID=1A

RL=15Ω

D

VOUT

P.G

50Ω

S MCH3478

Ratings

Unit

min

typ

max

30

V

1

μA

±10

μA

0.4

1.3

V

1.2

2.0

S

125

165 mΩ

165

235 mΩ

250

375 mΩ

130

pF

21

pF

14

pF

4.4

ns

8.7

ns

16

ns

12

ns

1.7

nC

0.25

nC

0.38

nC

0.85

1.2

V

Ordering Information

Device

MCH3478-TL-H

MCH3478-TL-W

Package

MCPH3

Shipping

3,000pcs./reel

memo

Pb Free and Halogen Free

No. A1353-2/5

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