HYB3164(5)800ATL 查看數據表（PDF） - Infineon Technologies

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HYB3164(5)800ATL

8M x 8-Bit Dynamic RAM (4k & 8k Refresh)

Infineon Technologies 

8M x 8-Bit Dynamic RAM

( 4k & 8k Refresh)

HYB 3164800AJ/AT(L) -40/-50/-60

HYB 3165800AJ/AT(L) -40/-50/-60

Advanced Information

• 8 388 608 words by 8-bit organization

• 0 to 70 °C operating temperature

• Fast Page Mode operation

• Performance:

-40 -50 -60

tRAC RAS access time

40

50

60

ns

tCAC CAS access time

10

13

15

ns

tAA Access time from address 20

25

30

ns

tRC Read/write cycle time

75

90

110 ns

tPC Fast page mode cycle time 30

35

40

ns

• Single + 3.3 V (± 0.3V) power supply

• Low power dissipation:

max. 396 mW active ( HYB 3164800AJ/AT(L) -40)

max. 324 mW active ( HYB 3164800AJ/AT(L) -50)

max. 270 mW active ( HYB 3164800AJ/AT(L) -60)

max. 558 mW active ( HYB 3165800AJ/AT(L) -40)

max. 468 mW active ( HYB 3165800AJ/AT(L) -50)

max. 378 mW active ( HYB 3165800AJ/AT(L) -60)

7.2 mW standby (LVTTL)

3.24 mW standby (LVCMOS)

720 µW standby for L-versions

• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh and self refresh (L-version only)

• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164800AJ/AT)

4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165800AJ/AT)

• 256 msec refresh period for L-versions

• Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)800AJ

P-TSOPII-32-1 400 mil HYB 3164(5)800AT(L)

Semiconductor Group

1

6.97

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