DS2012SF55 查看數據表（PDF） - Dynex Semiconductor

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DS2012SF55

Rectifier Diode

Dynex Semiconductor 

DS2012SF

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

10ms half sine; T = 150oC

case

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 150oC

VR = 0

Max. Units

13.5

kA

0.92 x 106 A2s

16.5

kA

1.425 x 106 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Clamping force 19.5kN

with mounting compound

Anode dc

Cathode dc

Double side

Single side

Forward (conducting)

Reverse (blocking)

Min. Max. Units

- 0.022 oC/W

- 0.038 oC/W

- 0.052 oC/W

- 0.004 oC/W

- 0.008 oC/W

-

160

oC

-

150

oC

–55 175

oC

18.0 22.0 kN

3/7

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