DS2012SF55 查看數據表（PDF） - Dynex Semiconductor

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DS2012SF55

Rectifier Diode

Dynex Semiconductor 

DS2012SF

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRRM

Peak reverse current

QS

Total stored charge

IRR

Peak recovery current

V

Threshold voltage

TO

r

Slope resistance

T

Conditions

At 3400A peak, Tcase = 25oC

At VRRM, Tcase = 150oC

I

F

=

2000A,

dI /dt

RR

=

3A/µs,

Tcase = 150˚C, VR = 100V

At T = 150˚C

vj

At T = 150˚C

vj

Min. Max. Units

-

2.1

V

-

75 mA

- 4500 µC

-

120

A

-

1.0

V

-

0.42 mΩ

CURVES

5000

Measured under pulse

conditions

4000

3000

3000

Tj = 25˚C

2000

2000

Tj = 150˚C

1000

1000

0

0

0

1.0

2.0

3.0

0

Instantaneous forward voltage, VF - (V)

Fig.2 Maximum (limit) forward characteristics

dc

Half wave

3 phase

6 phase

500

1000

1500

2000

Mean forward current, IF(AV) - (A)

Fig.3 Dissipation curves

VFM Equation:-

VFM = A + Bln (IF) + C.IF+D.√IF

Where

A = 0.819645

B = –0.13673

C = 5.73 x 10–5

D = 0.042435

these values are valid for Tj = 125˚C for IF 500A to 5000A

4/7

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