MMDL770 查看數據表（PDF） - Galaxy Semi-Conductor

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MMDL770

Schottky Barrier Diode

Galaxy Semi-Conductor 

Production specification

Schottky Barrier Diode

FEATURES

 Low reverse leakage—IR=200nA(Max.).

 Very Low Capacitance—1.0pF @20V.

Pb

Lead-free

 Extremely Low minority carrier lifetime.

 High reverse leakage—70V(min.)

MMDL770

APPLICATIONS

 For high-efficiency UHF and VHF detector applications.

SOD-323

ORDERING INFORMATION

Type No.

Marking

MMDL770

5H

Package Code

SOD-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

DC Reverse Voltage

VR

70

Power Dissipation

PD

200

Thermal resistance,junction to ambient air RθjA

635

Junction temperature

Tj

150

Storage temperature

TSTG

-55 to+150

Unit

V

mW

℃/W

℃

℃

B048

Rev.A

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