BD810 查看數據表（PDF） - Motorola => Freescale
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BD810 Datasheet PDF : 4 Pages
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BD808 BD810
.5 ms
10
5 ms 1 ms
1 ms
3
dc
1 TJ = 150°C
0.3
BD808
0.1
1
3
BD810
10
30
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region DC Safe Operating Area
(see Note 1)
2.0
1.8
TJ = 25°C
1.6
1.4
1.2
1.0
VBE(sat) @ IC/IB = 10
0.8
0.6
0.4
0.2 VBE @ VCE = 2.0 V
0
0.01 0.02
0.05 0.1
VCE(sat) @ IC/IB = 10
0.2 0.3 0.5 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltages
90
80
70
60
50
40
30
20
10
0
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 2. Power–Temperature Derating Curve
500
300
TJ = 150°C
100
25°C
50
– 55°C
VCE = 2.0 V
10
5.0
0.01
0.05 0.1
0.5 1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Current Gain
5.0 10
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
SINGLE PULSE
0.02
0.01
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
SINGLE P(pk)
θJC(t) = r(t) θJC
PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0 3.0 5.0
t, PULSE WIDTH (ms)
20 30 50 100 200 300 500 1000
Figure 5. Thermal Response
Note 1:
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2
Motorola Bipolar Power Transistor Device Data
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