BDX63(2012) 查看數據表（PDF） - Comset Semiconductors
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BDX63 Datasheet PDF : 4 Pages
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BDX63 – A – B – C
NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCEV
VEBO
IC
IB
PT
TJ
TS
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
VBE=-1.5 V
IC(RMS)
ICM
@ TC = 25°
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
Value
60
80
100
120
80
100
120
140
5.0
8
12
0.15
90
-55 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.94
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4
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