FDN306P 查看數據表（PDF） - Fairchild Semiconductor
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FDN306P Datasheet PDF : 5 Pages
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Typical Characteristics
20
VGS = -4.5V
-3.0V
15
-2.5V
10
5
-2.0V
-1.8V
-1.5V
0
0
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
ID = -2.6A
1.3 VGS = -4.5V
1.2
1.1
1
0.9
0.8
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = -5V
15
TA = -55oC
25oC
-125oC
10
5
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.2
2
VGS = -1.8V
1.8
1.6
-2.0V
1.4
-2.5V
1.2
-3.0V
-3.5V
1
-4.5V
0.8
0
5
10
15
20
-ID, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
0.1
0.08
0.06
0.04
0.02
1
ID = -1.3A
TA = 125oC
TA = 25oC
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN306P Rev D W)
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