NXP Semiconductors
MMIC wideband amplifier
Product specification
BGA2709
0
handbook, halfpage
s12 2
(dBm)
−10
MLD896
−20
−30
−40
−50
0
1000
2000
3000
4000
f (MHz)
IS = 23.5 mA; VS = 5 V; PD = 30 dBm; ZO = 50
Fig.9 Isolation (|s12|2) as a function of frequency;
typical values.
25
handbook, halfpage
s21 2
(dBm)
20
15
MLD897
(1)
(3)
(2)
10
0
1000
2000
3000
4000
f (MHz)
PD = 30 dBm; ZO = 50
(1) IS = 28.4 mA; VS = 5.5 V
(2) IS = 23.5 mA; VS = 5 V
(3) IS = 18.8 mA; VS = 4.5 V
Fig.10 Insertion gain (|s21|2) as a function of
frequency; typical values.
15
handbook, halfpage
PL
(dBm)
10
MLD898
(3)
(2)
(1)
5
0
−5
−10
−30
−20
−10 PD (dBm) 0
f = 1 GHz; ZO = 50
(1) VS = 4.5 V
(2) VS = 5 V
(3) VS = 5.5 V
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
15
handbook, halfpage
PL
(dBm)
10
5
MLD899
(3)
(2)
(1)
0
−5
−10
−30
−20
−10 PD (dBm) 0
f = 2.2 GHz; ZO = 50
(1) VS = 4.5 V
(2) VS = 5 V
(3) VS = 5.5 V
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
2002 Aug 06
6