2SB1626 查看數據表（PDF） - Sanken Electric co.,ltd.

零件编号

产品描述 (功能)

生产厂家

2SB1626

Silicon PNP Epitaxial Planar Transistor

Sanken Electric co.,ltd. 

Darlington

2SB1626

(70Ω) E

B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) Application : Audio, Series Regulator and General Purpose

sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics

(Ta=25°C)

Symbol

2SB1626

Unit

Symbol

Conditions

2SB1626 Unit

VCBO

–110

V

ICBO

VCB=–110V

–100max

µA

VCEO

–110

V

IEBO

VEB=–5V

–100max

µA

VEBO

–5

V

V(BR)CEO

IC=–30mA

–110min

V

IC

–6

A

hFE

VCE=–4V, IC=–5A

5000min∗

IB

–1

A

VCE(sat)

IC=–5A, IB=–5mA

–2.5max

V

PC

30(Tc=25°C)

W

VBE(sat)

IC=–5A, IB=–5mA

–3.0max

V

Tj

150

°C

fT

VCE=–12V, IE=0.5A

100typ

MHz

Tstg

–55 to +150

°C

COB

VCB=–10V, f=1MHz

110typ

pF

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

sTypical Switching Characteristics (Common Emitter)

VCC

RL

(V)

(Ω)

IC

VBB1

VBB2

IB1

IB2

ton

tstg

tf

(A)

(V)

(V)

(mA)

(mA)

(µs)

(µs)

(µs)

–30

6

–5

–10

5

–5

5

1.1typ 3.2typ 1.1typ

External Dimensions FM20(TO220F)

10.1±0.2

4.2±0.2

2.8 c0.5

ø3.3±0.2

a

b

1.35±0.15

1.35±0.15

2.54

0.85

+0.2

-0.1

2.54

0.45

+0.2

-0.1

2.4±0.2

2.2±0.2

Weight : Approx 2.0g

BCE

a. Type No.

b. Lot No.

I C– V CE Characteristics (Typical)

–6

––00..54mmAA

–0.3mA

–0.2mA

–4

IB=–0.1mA

–2

V CE( s a t ) – I B Characteristics (Typical)

–3

I C– V BE Temperature Characteristics (Typical)

(VCE=–4V)

–6

–2

–5A

–4

IC=–3A

–1

–2

0

0

–2

–4

–6

Collector-Emitter Voltage VCE(V)

0

–0.1

–0.5 –1

–5 –10

Base Current IB(mA)

–50 –100

0

0

–1

–2

–3

Base-Emittor Voltage VBE(V)

h FE– I C Characteristics (Typical)

40,000

(VCE=–4V)

Typ

10,000

5,000

h FE– I C Temperature Characteristics (Typical)

50000

10000

5000

(VCE=–4V)

125˚C

25˚C

–30˚C

θ j-a– t Characteristics

5.0

1.0

1000

1,000

500

500

0.5

200

–0.2

–0.05 –0.1

–0.5 –1

Collector Current IC(A)

–5 –6

100

–0.02 –0.05 –0.1

–0.5 –1

Collector Current IC(A)

0.3

–5 –6

1

10

100

Time t(ms)

1000

f T– I E Characteristics (Typical)

(VCE=–12V)

120

100

Typ

80

60

40

20

0

0.02 0.05 0.1

0.5 1

56

Emitter Current IE(A)

Safe Operating Area (Single Pulse)

–20

–10

–5

DC

1

00

m

1

s

0

m

s

–1

–0.5

–0.1

Without Heatsink

Natural Cooling

–0.05

–3

–5 –10

–50 –100 –200

Collector-Emitter Voltage VCE(V)

Pc–Ta Derating

30

20

10

Without Heatsink

2

0

0

25

50

75

100 125 150

Ambient Temperature Ta(˚C)

53

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