BFR92A 查看數據表（PDF） - Philips Electronics
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BFR92A Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
260
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector leakage current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power
gain (note 1)
F
noise figure
VO
output voltage
d2
second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 10 V
IC = 15 mA; VCE = 10 V; see Fig.4
IE = ie = 0; VCB = 10 V; f = 1 MHz;
see Fig.5
IC = ic = 0; VEB = 10 V; f = 1 MHz
IC = ic = 0; VCE = 10 V; f = 1 MHz
IC = 15 mA; VCE = 10 V; f = 500 MHz;
see Fig.6
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
IC = 5 mA; VCE = 10 V; f = 1 GHz;
Γs = Γopt; Tamb = 25 °C;
see Figs 13 and 14
IC = 5 mA; VCE = 10 V; f = 2 GHz;
Γs = Γopt; Tamb = 25 °C;
see Figs 13 and 14
notes 2 and 3
notes 2 and 4; see Fig.16
MIN.
−
40
−
−
−
−
−
−
−
−
−
−
TYP.
−
90
0.6
1.2
0.35
5
14
8
2.1
3
150
−50
MAX. UNIT
50
nA
−
−
pF
−
pF
−
pF
−
GHz
−
dB
−
dB
−
dB
−
dB
−
mV
−
dB
Notes
1. GUM is the maximum unilateral power gain, assuming
S12 is
zero and
GUM
=
10
log----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB˙ .
2. Measured on the same die in a SOT37 package (BFR90A).
3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB; fq = 803.25 MHz;
Vr = VO −6 dB; fr = 805.25 MHz;
measured at fp + fq − fr = 793.25 MHz.
4. IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C
Vp = 60 mV at fp = 250 MHz;
Vq = 60 mV at fq = 560 MHz;
measured at fp + fq = 810 MHz.
1997 Oct 29
3
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