2SC5239 查看數據表（PDF） - SavantIC Semiconductor
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2SC5239 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5239
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.2A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VCB=800V ;IE=0
VEB=7V; IC=0
IC=1A ; VCE=4V
IE=-0.25A ; VCE=12V
Cob
Collector output capacitance
Switching times
f=1MHz ; VCB=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A; IB1=0.15A ;IB2=-0.45A
VCC=250V; RL=250B
MIN TYP. MAX UNIT
550
V
0.5
V
1.2
V
100 µA
100 µA
10
30
6
MHz
35
pF
0.7
µs
4.0
µs
0.5
µs
2
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