6HP04MH 查看數據表（PDF） - ON Semiconductor

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6HP04MH

P-Channel Silicon MOSFET

ON Semiconductor 

6HP04MH

Ordering number : ENA0368

6HP04MH

Features

• 4V drive.

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

Conditions

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm2✕0.8mm)

Ratings

Unit

--60

V

±20

V

--120 mA

--480 mA

0.6

W

150

°C

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Marking : QB

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

yfs

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Conditions

ID=--1mA, VGS=0V

VDS=--60V, VGS=0V

VGS=±16V, VDS=0V

VDS=--10V, ID=--100µA

VDS=--10V, ID=--60mA

ID=--60mA, VGS=--10V

ID=--30mA, VGS=--4V

VDS=--20V, f=1MHz

VDS=--20V, f=1MHz

VDS=--20V, f=1MHz

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

min

--60

--1.2

100

Ratings

Unit

typ

max

V

--1 µA

±10 µA

--2.6

V

180

mS

5.1

6.6

Ω

6.8

9.6

Ω

13.5

pF

3.4

pF

1.3

pF

36.5

ns

38.0

ns

455

ns

160

ns

Continued on next page.

© 2011, SCILLC. All rights reserved.

Jan-2011, Rev. 0

Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com

Publication Order Number:

6HP04MH/D

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