BGA427(2001) 查看數據表（PDF） - Infineon Technologies

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BGA427
(Rev.:2001)

Si-MMIC-Amplifier in SIEGET 25-Technologie

Infineon Technologies 

BGA427

Electrical Characteristics at TA = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

Unit

AC characteristics VD = 3 V, Zo = 50 , Testfixture Appl.1

Insertion power gain

|S21|2

f = 0.1 GHz

f = 1 GHz

f = 1.8 GHz

min.

-

-

-

typ. max.

dB

27

-

22

-

18.5 -

Reverse isolation

f = 1.8 GHz

S12

-

22

-

Noise figure

f = 0.1 GHz

f = 1 GHz

f = 1.8 GHz

NF

-

1.9

-

-

2

-

-

2.2

-

Intercept point at the output

f = 1.8 GHz

Return loss input

f = 1.8 GHz

Return loss output

f = 1.8 GHz

IP3out

RLin

RLout

-

+7

- dBm

- >12 - dB

-

>9

-

Typical configuration

Appl.1

+V

100 pF

RF OUT

1 nF

BGA 427

RF IN

100 pF

GND

EHA07379

Appl.2

+V

2.2 pF

10 nF

100 nH

100 pF

100 pF

RF OUT

BGA 427

100 pF GND

RF IN

EHA07380

Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device

to provide a low impedance path (appl.1).

2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin

boards are recommended to minimize the parasitic inductance to ground.

2

Aug-02-2001

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