BGD816L 查看數據表（PDF） - NXP Semiconductors.
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BGD816L Datasheet PDF : 8 Pages
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NXP Semiconductors
860 MHz, 21.5 dB gain power doubler
amplifier
Product specification
BGD816L
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Gp
SL
FL
s11
s22
s21
CTB
Xmod
power gain
slope straight line
flatness straight line
input return losses
output return losses
phase response
composite triple beat
cross modulation
f = 45 MHz
21.2
f = 870 MHz
22
f = 45 to 870 MHz; note 1
0.5 1
f = 45 to 100 MHz
f = 100 to 800 MHz
f = 800 to 870 MHz
0.4
f = 45 to 80 MHz
22
f = 80 to 160 MHz
21
f = 160 to 320 MHz
19
f = 320 to 550 MHz
18
f = 550 to 650 MHz
17
f = 650 to 750 MHz
16
f = 750 to 870 MHz
15
f = 870 to 914 MHz
12
f = 45 to 80 MHz
25
f = 80 to 160 MHz
23
f = 160 to 320 MHz
18
f = 320 to 550 MHz
17
f = 550 to 650 MHz
16
f = 650 to 750 MHz
15
f = 750 to 870 MHz
15
f = 870 to 914 MHz
12
f = 50 MHz
45
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
132 chs flat; Vo = 44 dBmV; fm = 859.25 MHz
112 chs; fm = 547.25 MHz; Vo = 48.2 dBmV at
745 MHz; note 2
79 chs; fm = 331.25 MHz; Vo = 45.3 dBmV at
547 MHz; note 3
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
112 chs; fm = 745.25 MHz; Vo = 48.2 dBmV at
745 MHz; note 2
79 chs; fm = 445.25 MHz; Vo = 45.3 dBmV at
547 MHz; note 3
21.8 dB
23
dB
1.5 dB
0.25 dB
0.5 dB
0.1 dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
+45 deg
66 dB
59.5 dB
55 dB
59 dB
68.5 dB
64 dB
61 dB
58 dB
60 dB
66 dB
2001 Nov 15
3
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