FDS4072N3 查看數據表（PDF） - Fairchild Semiconductor
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FDS4072N3 Datasheet PDF : 7 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy Single Pulse, VDD = 20V, ID=12.4 A
IAS
Drain-Source Avalanche Current
200 mJ
12.4
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 32 V,
VGS = 12 V,
VGS = –12 V ,
VGS = 0 V
VDS = 0 V
VDS = 0 V
40
38
V
mV/°C
1
µA
100 nA
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS,
ID = 250 µA
1
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 12.4 A
VGS = 10 V, ID = 13.7 A
VGS = 4.5 V, ID = 12.4 A,TJ = 125°C
VDS = 10 V,
ID = 12.4 A
1.3
3
V
–4.5
mV/°C
9.7 12 mΩ
8.5 10
14.7 20
84
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 20 V,
f = 1.0 MHz
V GS = 0 V,
4299
pF
351
pF
149
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 20 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 20 V,
VGS = 4.5 V
ID = 12.4 A,
20 36
ns
12
22
ns
52 83
ns
18
32
ns
33
46
nC
7.8
nC
8.1
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.5 A (Note 2)
trr
Diode Reverse Recovery Time
IF = 12.4 A,
Qrr
Diode Reverse Recovery Charge diF/dt = 100 A/µs
2.5
A
0.7 1.2
V
30
nS
90
nC
FDS4072N3 Rev B2 (W)
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