BFQ149 查看數據表（PDF） - NXP Semiconductors.
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BFQ149 Datasheet PDF : 7 Pages
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NXP Semiconductors
PNP 5 GHz wideband transistor
DESCRIPTION
PNP transistor in a SOT89 envelope.
It is intended for use in
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analysers, etc.,
using SMD technology.
PINNING
PIN
DESCRIPTION
Code: FG
1 emitter
2 collector
3 base
Product specification
BFQ149
321
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
Ptot
hFE
fT
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
F
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
open base
−
−
−15 V
−
up to Ts = 135 °C (note 1)
−
IC = −70 mA; VCE = −10 V; Tj = 25 °C 20
IC = −75 mA; VCE = −10 V;
4
f = 500 MHz; Tj = 25 °C
IC = −50 mA; VCE = −10 V;
−
f = 500 MHz; Tamb = 25 °C
IC = −50 mA; VCE = −10 V;
−
Rs = 60 Ω; f = 500 MHz;
Tamb = 25 °C
−
−100 mA
−
1
W
50 −
5
−
GHz
12 −
dB
3.75 −
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
f > 1 MHz
up to Ts = 135 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−
−65
−
MAX.
−20
−15
−3
−100
−150
1
150
150
UNIT
V
V
V
mA
mA
W
°C
°C
Rev. 03 - 28 September 2007
2 of 7
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