1PS70SB14 查看數據表（PDF） - NXP Semiconductors.
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1PS70SB14 Datasheet PDF : 10 Pages
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NXP Semiconductors
103
IF
(mA)
102
10
(1) (2) (3)
1
006aac829
(3)
(1)
(2)
103
IR
(µA)
102
10
1
1PS70SB14
Dual Schottky barrier diode
aaa-004515
(1)
(2)
(3)
10-1
0.0
0.4
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
0.8
1.2
VF (V)
Fig. 1. Forward current as a function of forward
voltage; typical values
10
Cd
(pF)
8
10-1
0
10
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
20
30
VR (V)
Fig. 2. Reverse current as a function of reverse
voltage; typical values
006aac891
6
4
2
Fig. 3.
0
0
Tamb = 25 °C; f = 1 MHz
10
20
30
VR (V)
Diode capacitance as a function of reverse voltage; typical values
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
1PS70SB14
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2012
© NXP B.V. 2012. All rights reserved
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