2SA1215 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SA1215 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SA1215
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=-25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
ICBO
Collector cut-off current
VCB=-160V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-2A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=12Ω
IB1=-IB2=-0.5A
VCC=-60V
MIN TYP. MAX UNIT
-160
V
-2.0
V
-100
μA
-100
μA
50
180
400
pF
50
MHz
0.25
μs
0.85
μs
0.20
μs
hFE classifications
O
P
50-100
70-140
Y
90-180
2
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