MTB52N06V 查看數據表（PDF） - ON Semiconductor
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MTB52N06V Datasheet PDF : 10 Pages
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MTB52N06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 3)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
(Cpk ≥ 2.0) (Note 3)
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 26 Adc)
(Cpk ≥ 2.0) (Note 3)
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 52 Adc)
(VGS = 10 Vdc, ID = 26 Adc, TJ = 150°C)
Forward Transconductance (VDS = 6.3 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 52 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 52 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1)
(IS = 52 Adc, VGS = 0 Vdc)
(IS = 52 Adc, VGS = 0 Vdc, TJ = 150°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 52 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
ta
tb
QRR
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
LD
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Min
Typ
Max
Unit
60
−
−
66
−
Vdc
−
mV/°C
μAdc
−
−
10
−
−
100
−
−
100
nAdc
2.0
2.7
4.0
Vdc
−
6.4
−
mV/°C
Ohm
−
0.019 0.022
Vdc
−
−
1.4
−
−
1.2
17
24
−
mhos
−
1900
2660
pF
−
580
810
−
150
300
−
12
20
ns
−
298
600
−
70
140
−
110
220
−
125
175
nC
−
10
−
−
30
−
−
40
−
Vdc
−
1.0
1.5
−
0.98
−
−
100
−
ns
−
80
−
−
20
−
−
0.341
−
μC
nH
−
3.5
−
−
4.5
−
nH
−
7.5
−
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