MTB52N06V 查看數據表（PDF） - ON Semiconductor
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MTB52N06V Datasheet PDF : 10 Pages
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MTB52N06V
TYPICAL ELECTRICAL CHARACTERISTICS
110
100
90
80
70
60
50
40
30
20
10
0
0
VGS = 10 V
8V
9V
TJ = 25°C
7V
6V
5V
1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
110
100 VDS ≥ 10 V
90
80
70
60
50
100°C
25°C
40
30
20
10
TJ = − 55°C
0
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.035
0.03
VGS = 10 V
0.025
0.02
TJ = 100°C
25°C
0.015
0.01
− 55°C
0.005
0
0 10 20 30 40 50 60 70 80 90 100 110
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.023
0.022
TJ = 25°C
0.021
0.020
VGS = 10 V
0.019
15 V
0.018
0.017
0.016
0.015
5 15 25 35 45 55 65 75 85 95 105
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
VGS = 10 V
1.75 ID = 26 A
1.5
100
VGS = 0 V
TJ = 125°C
1.25
10
1
100°C
0.75
0.5
0.25
− 50 − 25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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