BPW85C(1999) 查看數據表（PDF） - Vishay Semiconductors
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BPW85C Datasheet PDF : 6 Pages
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Silicon NPN Phototransistor
Description
BPW85 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1 (ø 3
mm) plastic package. Due to its waterclear epoxy the
device is sensitive to visible and near infrared radi-
ation.
The viewing angle of ± 25° makes it insensible to ambi-
ent straylight.
Features
D Fast response times
D High photo sensitivity
D Standard T–1 (ø 3 mm ) clear plastic package
D Axial terminals
D Angle of half sensitivity ϕ = ± 25°
D Suitable for visible and near infrared radiation
D Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
BPW85
Vishay Telefunken
94 8396
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
x tp/T = 0.5, tp 10 ms
x Tamb 55 °C
xt 3 s, 2 mm from case
Symbol
Value
Unit
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
70
V
5
V
50
mA
100
mA
100
mW
100
°C
–55...+100 °C
260
°C
450
K/W
Document Number 81531
Rev. 3, 16-Nov-99
www.vishay.de • FaxBack +1-408-970-5600
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