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BPW85(1999) 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
BPW85
(Rev.:1999)
Vishay
Vishay Semiconductors Vishay
BPW85 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BPW85
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Collector Emitter Breakdown IC = 1 mA
V(BR)CE 70
V
Voltage
O
Collector Dark Current
VCE = 20 V, E = 0
ICEO
1
200 nA
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO
3
pF
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
ϕ
±25
deg
ll0p.5
850
620...980
nm
nm
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
W VS = 5 V, IC = 5 mA,
RL = 100
W VS = 5 V, IC = 5 mA,
RL = 100
VCEsat
ton
toff
0.3
V
2.0
ms
2.3
ms
Cut–Off Frequency
W VS = 5 V, IC = 5 mA,
RL = 100
fc
180
kHz
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
l Collector Light Current Ee=1mW/cm2,
=950nm, VCE=5V
Type
BPW85A
BPW85B
BPW85C
Symbol Min Typ Max Unit
Ica
0.8 1.5 2.5 mA
Ica
1.5 2.5 4.0 mA
Ica
3.0 5.0 8.0 mA
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125
104
100
103
75
VCE=20V
RthJA
102
50
101
25
0
0
20
40
60
80 100
94 8308
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
100
20
40
60
80
100
94 8304
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (6)
Document Number 81531
Rev. 3, 16-Nov-99

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