C30T03QLH-11A 查看數據表（PDF） - Nihon Inter Electronics

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C30T03QLH-11A

Schottky Barrier Diode

Nihon Inter Electronics 

S B D T y p e : C30T03QLH-11A

FEATURES

*Tabless TO-220

*Dual Diodes – Cathode Common

*Low Forward Voltage Drop

*High Surge Capability

*Tj=150 °C operation

OUTLINE DRAWING

Maximum Ratings

Rating

Repetitive Peak Reverse Voltage

Repetitive Peak Surge Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Symbol

VRRM

VRRSM

IO

IF(RMS)

IFSM

Tjw

Tstg

Approx Net Weight: 1.45g

C30T03QLH-11A

30

35(pulse width ≤ 1µs duty ≤ 1/50)

30

Tc=114°C

50 Hz Full Sine Wave

Resistive Load

33.3

250

50Hz Full Sine Wave ,1cycle

Non-repetitive

-40 to +150

-40 to +150

Unit

V

V

A

A

A

°C

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance

Symbol

Conditions

IRM

Tj= 25°C, VRM= VRRM

per arm

VFM

Tj= 25°C, IFM= 15 A

per arm

Rth(j-c) Junction to Case

Min. Typ. Max. Unit

-

-

1 mA

-

- 0.56 V

-

-

1.5 °C /W

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