TPD1009S 查看數據表（PDF） - Unspecified

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TPD1009S

High-Side Power Switch for Motor, Solenoid and Lamp Drive Applications

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TPD1009S

q High-Side Power Switch for Motor, Solenoid and Lamp Drive Applications

TPD1009S is a monolithic power IC for high-side switches. The IC has a vertical MOSFET output which

can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent

self-protection and diagnostic functions.

Features

Timing Chart

q A monolithic power IC with a new

structure combining a control

Input Signal

block (Bi-CMOS) and a vertical

power MOSFET (π-MOS) on a

single chip.

Overtemperature

q One side of load can be

grounded to a high-side switch.

q Can directly drive a power load

Overcurrent

from a micriprocessor.

q Built-in protection against thermal

shutdown and load short circuiting.

q Incorporates a diagnosis function

that allows diagnosis output to be

read externally at load short cir-

Output Signal

Diagnosis

Output

OFF

Current limit

cuiting, opening, or overtemperature.

q Up to –10 V of counterelectro-

Maximum Rating(Ta = 25°C)

motive force from an L load can

Characteristic

Symbol

Rating

Unit

be applied.

q Low ON-resistance: RON = 60 mΩ

q (max)

Drain-Source Voltage

VDS

60

V

Supply Voltage

DC

VDD (1)

25

V

Pulse

VDD (2)

60 (Rs = 1Ω, τ = 250 ms)

Low operating current: IDD = 1 mA

q (typ.) (@ VDD = 12 V, VIN = 0 V)

q 5-pin TO-220 insulated package

q Three standard lead configura-

tions

Input Voltage

DC

VIN (1)

– 0.5 to 12

V

Pulse

VIN (2)

VDD (1) + 1.5 (t = 100 ms)

Diagnosis Output Voltage

VDIAG

– 0.5 to 25

V

Output Current

IO

Internally limited

A

Input Current

IIN

±10

mA

Diagnosis Output Current

IDIAG

5

mA

Power Dissipation Tc = 25°C

PD (1)

30

W

Ta = 25°C

PD (2)

2

TO-220NIS 5PIN

(LBS)

Operating Temperature

Junction Temperature

Storage Temperature

Topr

Tj

Tstg

– 40 to 110

°C

150

°C

– 55 to 150

°C

Lead Temperature / Time

TSOL

275 (5 s), 260 (10 s)

°C

Electrical Characteristics (Tj = –40 to 110°C, VDD = 8 to 18 V)

Characteristic

Symbol

Test Condition

Operating Supply Voltage

VDD(opr)

–

Supply Current

IDD

VDD = 12 V, VIN = 0 V

Input Voltage

VIH

VDD = 12 V, IO = 8 A

VIL

VDD = 12 V, IO = 1.2 mA

Input Current

IIN (1)

IIN (2)

VDD = 12 V, VIN = 5 V

VDD = 12 V, VIN = 0 V

On-Voltage

On-Resistance

VDS(ON)

RDS(ON)

VDD = 12 V, IO = 8 A, Tj = 25°C

Output Leakage Current

IOL

VDD = 18 V, VIN = 0 V

Diagnosis Output Voltage “L” Level VDL

VDD = 12 V, IDL = 2 mA

Diagnosis Output Current “H” Level IDH

VDD = 18 V, VDH = 18 V

Overcurrent Protection

IS (1) (Note 1)

IS (2) (Note 2)

VDD = 12 V, Tj = 25°C

Thermal

Temperature

TS

–

Shutdown Hysteresis

∆TS

–

Open Detection Resistance

Switching Time

Rops

tON

tOFF

VDD = 8 V

VDD = 12 V, RL = 5 Ω, Tj = 25°C

Note1 : IS (1) Overcurrent detection value when load is short circuited and VIN = “L” → “H”

Note2 : IS (2) Overcurrent detection value when load current is increased while VIN = “H”

Min

Typ.

Max

Unit

5

12

18

V

–

1

5

mA

3.5

–

–

V

–

–

1.5

–

50

200

µA

– 0.2

–

0.2

–

–

0.48

V

–

–

0.06

Ω

–

–

1.2

mA

–

–

0.4

V

–

–

10

µA

8

12

–

A

15

24

–

150

160

200

°C

–

10

–

1

50

100

kΩ

10

200

–

µs

10

30

–

13

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