FMMT593 查看數據表（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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FMMT593

TRANSISTOR (PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

FMMT593

TRANSISTOR (PNP)

FEATURES

 Complementary Type FMMT493

MARKING:593

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

-120

VCEO Collector-Emitter Voltage

-100

VEBO Emitter-Base Voltage

-5

IC

Collector Current

-1

PC

Collector Power Dissipation

250

RΘJA Thermal Resistance From Junction To Ambient

500

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

A

mW

℃/W

℃

℃

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max Unit

Collector-base breakdown voltage

V(BR)CBO IC=-100µA, IE=0

-120

V

Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0

-100

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-100V, IE=0

-0.1

µA

Collector cut-off current

ICES

VCES=-100V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-0.1

µA

hFE(1) * VCE=-5V, IC=-1mA

100

DC current gain

hFE(2) *

hFE(3) *

VCE=-5V, IC=-250mA

VCE=-5V, IC=-0.5A

100

100

300

hFE(4) * VCE=-5V, IC=-1A

50

Collector-emitter saturation voltage

VCE(sat)1* IC=-250mA, IB=-25mA

VCE(sat)2* IC=-500mA, IB=-50mA

-0.2

V

-0.3

V

Base-emitter saturation voltage

VBE(sat)* IC=-500mA, IB=-50mA

-1.1

V

Base-emitter voltage

VBE* VCE=-5V, IC=-1mA

-1

V

Transition frequency

fT

VCE=-10V,IC=-50mA, f=100MHz

50

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

5

pF

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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