BYW80PI-200 查看數據表（PDF） - STMicroelectronics

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BYW80PI-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

STMicroelectronics 

BYW80PI-200

Fig.7 : Junction capacitance versus reverse

voltage applied (Typical values).

Fig.8 : Recovery charges versus dIF/dt.

C(pF)

QRR(nC)

90% CONFIDENCE Tj=125 o C

IF=IF(av)

VR(V)

dIF/dt(A/us)

Fig.9 : Peak reverse current versus dIF/dt.

I RM(A)

90% CONFIDENCE Tj=125 oC

IF=IF(av)

Fig.10 : Dynamic parameters versus junction

temperature.

Q RR ; IRM [T j]/Q R R; IRM [ Tj=125O C]

dIF/dt(A/us)

IRM

QRR

Tj( oC)

4/5

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