BD744 查看數據表（PDF） - New Jersey Semiconductor
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BD744 Datasheet PDF : 2 Pages
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cxJ.EIIE.L*Iy <$£mi-t.onductoT. LPiodueti, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD744
DESCRIPTION
• Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -45V(Min)
• Collector Power Dissipation-
: Pc= 90W@ lc= 25'C
• 15A Continuous Collector Current
• Complement to Type BD743
APPLICATIONS
• Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-50
VCEO
Collector-Emitter Voltage
-45
VEBO
Emitter-Base Voltage
-5
Ic
Collector Current-Continuous
-15
I CM
Collector Current-Peak
-20
IB
Base Current-Continuous
-5
Collector Power Dissipation
2
@ Ta=25"C
PC
Collector Power Dissipation
@ TC=25°C
90
Tj
Junction Temperature •
150
Tstg
Storage Temperature Range
-65-150
UNIT
V
V
V
A
A
A
W
°C
•c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
1.4 'CM/
Thermal Resistance, Junction to Ambient 62.5 °C/W
OuriliK/ S
1
1
1 23
' •X
3
PIN 1.BASE
2. COLLECTOR
3 EMITTER
TO-220C package
*• B H
MQ 3-&b
T J_ MLOCV
• H ''
„
^
t K
T
il
\l
1V
H <3 r*-
-^ * " J
1tl ; 1
J
A
mm
DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 O.dO
F 3.40 3.60
G 4.98 5.18
K 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
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