MJ10042 查看數據表（PDF） - New Jersey Semiconductor
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MJ10042 Datasheet PDF : 2 Pages
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MJ10042, MJ10045, MJ10048
MAXIMUM RATINGS (Continued) (Tc - 26°C unless otherwise noted.)
Riling
Collector. Emitter Volume (IB = 0)
Collector-Emitter Voltage (RBE- 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Operating
Collector Current — Continuous
— Peak Repetitive
— Peak Nonrepelitive
(Tc - 1 1 5°C)
(TC = SS'C)
(Tc = 66°C)
Base Current — Continuous
— Peak Nonrepethlve
Total Device Dissipation
Derate above TC = 26°C
For 1 -minute overload
Operating Junction and Storage Temperature Range
For 1 -minute overload
Symbol MJ10042 MJ1004E MJ10048
VCEO
850
460
250
VCER
900
500
300
VCB
900
500
300
VEB
8.0
'Clop)
25
60
100'
ic
37.6
75
100
76
160
300
126
26O
600
IB
25
EO
PD
250
2.0
,
333
TJ. Tstg
-66(0*150
-SB to 200
Unit
Vdc
Vdc
Vdc
Vdc
A
A
A
Watts
W/»C
Watts
°C
ELECTRICAL CHARACTERISTICS (Tc * 2S°C unless otherwise noted)
Characteristic
Symbol
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1]
(lc = 1 25 m Adc)
Collector Cutoff Current
(VCE = Rated VCB. VBE(off) = < 5 Vdc)
(VCE = Bated VCB. VBE(off) = ' -5 Vdc, Tc * 1 50°C)
Collector Cutoff Current
(VCE « Rated VCER. RBE = 10 n, TC - 100°C)
Emitter Cutod Current
(VEB =4.0 vac, 'c*0)
VCEO(SUS)
Vdc
MJ10042
MJ1O045
650
4SO
-
MJ1O048
260
ICEV
-
2.0
mA
10
'CER
—
10
mA
IE BO
—
3SO
mA
SAFE OPERATING AREA
Second Breakdown Collector Current with Base Forward-Biased
Clamped Inductive SOA with Base Reverse-Biased
Overload Safe Operating Area
FBSOA
RE SO A
OLSOA
See Figures 32, 34 & 36
See Figures 33. 35 & 37
See Figures 38, 39, 40. 41 , 42 & 43
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc. IE = 0. f,ast - 1 .0 kHz)
Cob
—
2000
pF
(1) Pulse Teftt. PulS* width of 300 pfl, duty eycla £2.0%.
* This rating fs with a 50% duty cycle, and Is limited by power dissipation. Higher operating currents are allowable it tower duty cycl«.
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