FZT604 查看數據表（PDF） - Zetex => Diodes
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FZT604 Datasheet PDF : 3 Pages
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SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 - OCTOBER 1995
FEATURES
FZT604
FZT605
* Guaranteed hFE Specified up to 2A
C
* Fast Switching
PARTMARKING DETAIL - DEVICE TYPE IN FULL
COMPLEMENTARY TYPES - FZT604 - FZT704
FZT605 - FZT705
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT604 FZT605
UNIT
Collector-Base Voltage
VCBO
120
140
V
Collector-Emitter Voltage
VCEO
100
120
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
1.5
A
Power Dissipation
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
FZT604
Breakdown Voltage FZT605
Collector-Emitter
FZT604
Breakdown Voltage FZT605
Emitter-Base Breakdown Voltage
Collector Cut-Off
Current
FZT604
FZT605
Emitter Cut-Off Current
Collector-Emitter
Cut-Off Current
FZT604
FZT605
Collector-EmitterSaturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward
Current Transfer Ratio
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
VBE(sat)
VBE(on)
hFE
120
V
140
V
100
V
120
10
V
0.01 µA
10 µA
0.01 µA
10 µA
0.1 µA
10 µA
10 µA
1.0, V
1.5 V
1.8 V
1.7 V
2K
5K
2K 100K
0.5K
IC=100µA
IC=100µA
IC=10mA*
IC=10mA*
IE=100µA
VCB=100V
VCB=100V,Tamb=100°C
VCB=120V
VCB=120V,Tamb=100°C
VEB=8V
VCES=100V
VCES=120V
IC=250mA, IB=0.25mA*
IC=1A, IB=1mA*
IC=1A, IB=1mA*
IC=1A, VCE=5V*
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
3 - 202
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