STTA106 查看數據表（PDF） - STMicroelectronics

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STTA106

TURBOSWITCH™ ULTRA-FAST HIGH VOLTAGE DIODE

STMicroelectronics 

STTA106/U

APPLICATION DATA (Cont’d)

Fig. B : STATIC CHARACTERISTICS

I

IF

Rd

VR

V

I R Vto V F

Conduction losses :

P1 = Vto x IF(AV) + Rd x IF2(RMS)

Reverse losses :

P2 = VR x IR x (1 - δ)

Fig. C : TURN-OFF CHARACTERISTICS

V

IL

TRANSISTOR

I

t

Turn-on losses :

(in the transistor, due to the diode)

P5 = VR

×

IRM 2 × (3+2 × S) × F

6 x dIF ⁄ dt

+ VR

×

IRM × IL × (S + 2) × F

2 × dIF ⁄ dt

I

dI F /dt

DIODE

V

ta tb

t

I RM

dI R /dt

VR

trr = ta + tb S = tb / ta

I

dIF /dt = VR /L

RECTIFIER

OPERATION

V

ta tb

IRM

dIR /dt

trr = ta + tb

S = tb/ta

t

VR

6/8

Turn-off losses (in the diode) :

P3 = VR

× IRM 2 × S × F

6 x dIF ⁄ dt

P3 and P5 are suitable for power MOSFET and

IGBT

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