GI817HE3/54 查看數據表（PDF） - Vishay Semiconductors
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GI817HE3/54 Datasheet PDF : 4 Pages
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GI810 thru GI818
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GI810 GI811 GI812 GI814 GI816 GI817 GI818 UNIT
Typical thermal resistance
RJA (1)
45
°C/W
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
GI816-E3/54
0.425
54
4000
GI816-E3/73
0.425
73
2000
GI816HE3/54 (1)
0.425
54
4000
GI816HE3/73 (1)
0.425
73
2000
Note
(1) AEC-Q101 qualified
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.0
10
0.8
0.6
0.4
0.2
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
20 40 60 80 100 120 140 160 180
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
1
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
40
TA = 75 °C
8.3 ms Single Half Sine-Wave
(JEDEC Method)
30
100
10
TJ = 125 °C
20
1
TJ = 75 °C
10
0.1
TJ = 25 °C
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
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For technical questions within your region, please contact one of the following: Document Number: 88628
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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