JCT810 查看數據表（PDF） - JIEJIE MICROELECTRONICS CO.,Ltd
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JCT810 Datasheet PDF : 6 Pages
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JCT610/810 Series
JieJie Microelectronics CO. , Ltd
TO-220A(Ins) /
RMS on-state current TO-220F(Ins)
(TC=85℃)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
IT(RMS)
ITSM
I2t
dI/dt
IGM
10
A
120
A
72
A2s
50
A/μs
4
A
Average gate power dissipation
PG(AV)
1
W
Peak gate power
PGM
5
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT
-
VD=12V RL=33Ω
VGT
-
VGD VD=VDRM Tj=125℃ RL=3.3KΩ
0.2
IL
IG=1.2IGT
-
IH
IT=500mA
-
dV/dt VD=2/3VDRM Gate Open Tj=125℃
50
-
10
-
1.5
-
-
-
25
-
15
-
-
Unit
mA
V
V
mA
mA
V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=20A tp=380μs
Tj=25℃
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=25℃
Tj=125℃
Value(MAX) Unit
1.55
V
5
μA
1
mA
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