VS-21DQ06TR 查看數據表（PDF） - Vishay Semiconductors
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VS-21DQ06TR Datasheet PDF : 6 Pages
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www.vishay.com
VS-21DQ06, VS-21DQ06-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Typical junction capacitance
CT
Typical series inductance
LS
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
2A
TJ = 25 °C
4A
2A
TJ = 125 °C
4A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
VALUES
TYP. MAX.
0.53
0.60
0.67
0.75
0.49
0.55
0.61
0.67
0.02
0.50
7.0
10
120
8.0
UNITS
V
mA
pF
nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
RthJA
RthJL
DC operation
Without cooling fin
DC operation
See fig. 4
Approximate weight
Marking device
Case style DO-204AL (D-41)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 40 to 150
UNITS
°C
100
°C/W
25
0.33
g
0.012
oz.
21DQ06
Revision: 21-Sep-11
2
Document Number: 93280
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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