VS-21DQ06TB 查看數據表（PDF） - Vishay Semiconductors
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VS-21DQ06TB Datasheet PDF : 6 Pages
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10
1
TTJJ
=
=
150°C
125°C
TJ = 25°C
0.1
0
0.3
0.6
0.9
1.2
93280_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
1
0.1
0.01
0.001
TJ = 150° C
TJ = 125° C
TJ = 100° C
TJ = 75° C
TJ = 50° C
TJ = 25° C
0.0001
0
20
40
60
93280_02
VR - Reverse Voltage (V)
Fig. 2 - - Typical Values of Reverse Current vs.
Reverse Voltage
1000
VS-21DQ06, VS-21DQ06-M3
Vishay Semiconductors
150
DC
120
90
Square wave (D = 0.50)
60 80 % rated VR applied
30
= 1/8 inch
see note (1)
0
0
1
2
3
93280_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
2
D = 0.20
1.6
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1.2
DC
0.8
RMS Limit
0.4
0
0
1
2
3
93280_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
100
TJ = 25 °C
100
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
0
20
40
60
93280_03
VR - Reverse Voltage (V)
Fig. 3 - - Typical Junction Capacitance vs.
Reverse Voltage
10
10
100
1000
10 000
93280_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TL = TJ - (Pd + PdREV) x RthJL;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 21-Sep-11
3
Document Number: 93280
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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