MB84VD22181 查看數據表（PDF） - Fujitsu

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MB84VD22181

32M (× 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-50206-1E

Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM

CMOS

32M (× 8/×16) FLASH MEMORY &

4M (× 8/×16) STATIC RAM

MB84VD2218XEG-90/MB84VD2219XEG-90

MB84VD2218XEH-90/MB84VD2219XEH-90

s FEATURES

• Power supply voltage of 2.7 V to 3.3 V

• High performance

90 ns maximum access time (Flash)

85 ns maximum access time (SRAM)

• Operating Temperature

–25°C to +85°C

• Package 71-ball BGA

s PRODUCT LINE UP

Ordering Part No.

+0.3 V

VCCf,VCCs = 3.0 V –0.3 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

(Continued)

Flash Memory

SRAM

MB84VD2218XEG/EH-90/MB84VD2219XEG/EH-90

90

85

90

85

40

45

s PACKAGE

71-ball plastic FBGA

(BGA-71P-M02)

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