MURA205T3G(2012) 查看數據表（PDF） - ON Semiconductor
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MURA205T3G Datasheet PDF : 5 Pages
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MURA205T3G, MURA210T3G, SURA8210T3G
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MURA205T3G
MURA210T3G/SURA8210T3G
Rating
Symbol
VRRM
VRWM
VR
Value
50
100
Unit
V
Average Rectified Forward Current
@ TL = 155C
@ TL = 135C
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IF(AV)
A
1.0
2.0
IFSM
A
50
Operating Junction Temperature Range
TJ
−65 to +175
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Lead (TL = 25C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
PsiJL
24
(Note 2)
RqJA
216
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by RqJL) are now referenced as PsiJL.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 2.0 A, TJ = 25C)
(iF = 2.0 A, TJ = 150C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, TJ = 25C)
(Rated DC Voltage, TJ = 150C)
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
vF
iR
trr
Max
0.94
0.74
2.0
50
30
Unit
C/W
Unit
V
mA
ns
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