2SC2412K 查看數據表（PDF） - TY Semiconductor

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产品描述 (功能)

生产厂家

2SC2412K

General Purpose Transistor

TY Semiconductor 

Product specification

2SC2412K

Features

Low Cob.Cob=2.0pF (Typ.)

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

Unit: mm

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

60

V

VCEO

50

V

VEBO

7

V

IC

0.15

A

PC

0.2

W

Tj

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current Gain

Collector-emitter saturation voltage

Collector Output Capacitance

Transition frequency

Symbol

Testconditons

VCBO IC=50ìA

VCEO IC=1mA

VEBO IE=50ìA

ICBO VCB=60V

IEBO VEB=7V

hFE VCE=6V, IC=1mA

VCE(sat) IC/IB=50mA/5mA

Cob VCE=12V, IE=0A, f=1MHz

fT VCE=12V, IE=-2mA, f=100MHz

■ hFE Classification

Marking

Rank

hFE

BQ

Q

120～270

BR

R

180～390

BS

S

270～560

Min Typ Max Unit

60

V

50

V

7

V

0.1 ìA

0.1 ìA

120

560

0.4 V

2 3.5 pF

180

MHz

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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