BFG505W/X 查看數據表（PDF） - Philips Electronics
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BFG505W/X Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X
SPICE parameters for the BFG505W(/X) die
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
134.1 aA
2
BF
180.0 −
3
NF
0.988 −
4
VAF
38.34 V
5
IKF
150.0 mA
6
ISE
27.81 fA
7
NE
2.051 −
8
BR
55.19 −
9
NR
0.982 −
10
VAR
2.459 V
11
IKR
2.920 mA
12
ISC
17.45 aA
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
1.062 −
20.00 Ω
1.000 µA
20.00 Ω
1.171 Ω
4.350 Ω
0.000 −
1.110 eV
3.000 −
22
CJE
284.7 fF
23
VJE
600.0 mV
24
MJE
0.303 −
25
TF
7.037 ps
26
XTF
12.34 −
27
VTF
1.701 V
28
ITF
30.64 mA
29
PTF
0.000 deg
30
CJC
242.4 fF
31
VJC
188.6 mV
32
33
34
35 (1)
MJC
XCJC
TR
CJS
0.041 −
0.130 −
1.332 ns
0.000 F
SEQUENCE No.
36 (1)
37 (1)
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.897 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C cb
L1
B
C be
LB
B' C'
E'
LE
L3
L2
C
Cce
MBC964
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
Fig.20 Package equivalent circuit SOT343N.
List of components (see Fig.20)
DESIGNATION
Cbe
Ccb
Cce
L1
L2
L3
LB
LE
VALUE
70
50
115
0.34
0.10
0.25
0.40
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
1998 Oct 02
11
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