BFG505W/X 查看數據表（PDF） - Philips Electronics

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BFG505W/X

NPN 9 GHz wideband transistors

Philips Electronics 

Philips Semiconductors

NPN 9 GHz wideband transistors

Product specification

BFG505W; BFG505W/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end applications in the GHz range, such as

analog and digital cellular telephones, cordless telephones

(CT2, CT3, PCN, DECT, etc.), radar detectors, pagers,

satellite television tuners (SATV).

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin

dual-emitter SOT343N plastic package.

MARKING

TYPE NUMBER

BFG505W

BFG505W/X

CODE

N0

N1

PINNING

PIN

1

2

3

4

DESCRIPTION

BFG505W

BFG505W/X

collector

base

emitter

emitter

collector

emitter

base

emitter

handbook, halfpage

4

3

1

Top view

2

MBK523

Fig.1 Simplified outline SOT343N.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCES

IC

Ptot

hFE

Cre

fT

GUM

|S21|2

F

collector-base voltage open emitter

collector-emitter voltage RBE = 0

collector current (DC)

total power dissipation Ts ≤ 85 °C

DC current gain

IC = 5 mA; VCE = 6 V

feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz

transition frequency

maximum unilateral

power gain

IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C

IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C

IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C

insertion power gain

noise figure

IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C

Γs = Γopt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz

MIN. TYP. MAX. UNIT

−

−

20 V

−

−

15 V

−

−

18 mA

−

−

500 mW

60 120 250

−

0.2 −

pF

−

9

−

GHz

−

19 −

dB

12 −

dB

15 16 −

dB

−

1.9 −

dB

1998 Oct 02

2

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