Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X
250
handbook, halfpage
hFE
200
MRA639
150
100
50
0
10−3
10−2
10−1
1
10
102
IC (mA)
VCE = 6 V.
Fig.3 DC current gain as a function of collector
current; typical values.
handbook0, .h4alfpage
C re
(pF)
0.3
MLC032
0.2
0.1
0
0
2
4
6
8
10
VCB (V)
IC = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook,1h2alfpage
fT
(GHz)
8
MLC033
VCE = 6 V
VCE = 3 V
4
0
10 1
1
10 I C (mA) 10 2
f = 1 GHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 02
5