BFG505W/X 查看數據表（PDF） - Philips Electronics
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BFG505W/X Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X
4
handbook, halfpage
F
(dB)
3
MLC038
2 f = 2000 MHz
1000 MHz
900 MHz
1
500 MHz
0
10 1
1
IC (mA)
10
VCE = 6 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
5
handbook, halfpage
Fmin
(dB)
4
3
MRA650
20
f = 900 MHz Gass
(dB)
15
1000 MHz
Gass
2000 MHz
10
2
2000 MHz
5
1000 MHz
Fmin
900 MHz
1
500 MHz
0
0
10−1
−5
1
IC (mA)
10
VCE = 6 V.
Fig.11 Associated available gain as a function of
collector current; typical values.
4
handbook, halfpage
F
(dB)
3
2
I C = 5 mA
1 1.25 mA
0
10 2
MLC039
10 3
10 4
f (MHz)
handboFomk, ihn5alfpageIC = 1.25 mA
(dB)
4
5 mA
Gass
MRA651
20
Gass
(dB)
15
3
10
2
5 mA
1
1.25 mA
Fmin
0
102
103
f (MHz)
5
0
−5
104
VCE = 6 V.
Fig.12 Minimum noise figure as a function
of frequency; typical values.
1998 Oct 02
VCE = 6 V.
Fig.13 Associated available gain as a function
of frequency; typical values.
7
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