MMBT2222 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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MMBT2222 Datasheet PDF : 4 Pages
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Typical Characteristics
Static Characteristic
0.25
COMMON EMITTER
Ta=25℃
0.20
0.15
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.10
0.4mA
0.05
0.00
0
0.5
β=10
0.3mA
0.2mA
IB=0.1mA
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat —— IC
0.4
0.3
0.2
Ta=100℃
0.1
Ta=25℃
0.0
1
10
100
600
COLLECTOR CURRENT IC (mA)
600
COMMON EMITTER
VCE=10V
100
IC —— VBE
Ta=100℃
10
Ta=25℃
1
500
400
300
200
100
0
0.1
1.2
0.8
0.4
0.0
1
100
10
hFE —— IC
COMMON EMITTER
VCE=10V
Ta=100℃
Ta=25℃
1
10
100
600
COLLECTOR CURRENT IC (mA)
VBEsat —— IC
Ta=25℃
Ta=100℃
10
100
COLLECTOR CURRENT IC (mA)
Cob/ Cib —— VCB/ VEB
Cib
β=10
600
f=1MHz
IE=0/ IC=0
Ta=25℃
Cob
0.1
0.0
500
0.2
0.4
0.6
0.8
1.0
BASE-EMMITER VOLTAGE VBE (V)
fT —— IC
COMMON EMITTER
VCE=20V f=200MHz
Ta=25℃
1
0.1
400
300
1
REVERSE VOLTAGE V (V)
Pc —— Ta
10
20
200
100
100
10
80
COLLECTOR CURRENT IC (mA)
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2
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