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BAS170WS-HE3-08 查看數據表(PDF) - Vishay Semiconductors

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BAS170WS-HE3-08
VISHAYSEMICONDUCTOR
Vishay Semiconductors VISHAYSEMICONDUCTOR
BAS170WS-HE3-08 Datasheet PDF : 3 Pages
1 2 3
www.vishay.com
BAS170WS
Vishay Semiconductors
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Schottky diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
ORDERING CODE
BAS170WS
BAS170WS-E3-08 or BAS170WS-E3-18
BAS170WS-HE3-08 or BAS170WS-HE3-18
CIRCUIT
CONFIGURATION
Single
TYPE MARKING
73
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation (1)
tp < 1 s
VRRM
IF
IFSM
Ptot
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
70
70
600
200
UNIT
V
mA
mA
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Operating temperature range
Storage temperature range
RthJA
Tj
Top
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
650
125
-55 to +125
-65 to +150
UNIT
K/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Reverse breakdown voltage
Leakage current
Forward voltage
Forward voltage (1)
Diode capacitance
Differential forward resistance
IR = 10 μA (pulsed)
V(BR)
70
VR = 50 V
IR
VR = 70 V
IR
IF = 1 mA
VF
IF = 10 mA
VF
IF = 15 mA
VF
VR = 0 V, f = 1 MHz
CD
IF = 5 mA, f = 10 kHz
rf
Note
(1) Pulse test; tp 300 μs
TYP.
375
705
880
1.5
34
MAX.
0.1
10
410
750
1000
2
UNIT
V
μA
μA
mV
mV
mV
pF
Ω
Rev. 2.2, 01-Jun-17
1
Document Number: 85653
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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