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MBR20100CT 查看數據表(PDF) - Gaomi Xinghe Electronics Co., Ltd.

零件编号
产品描述 (功能)
生产厂家
MBR20100CT
GXELECTRONICS
Gaomi Xinghe Electronics Co., Ltd. GXELECTRONICS
MBR20100CT Datasheet PDF : 2 Pages
1 2
星合电子
XINGHE ELECTRONICS
MBR2020CT THRU MBR20200CT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 20Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
XH
MBR2060CT
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
Dual rectifier construction
High temperature soldering guaranteed:260° C/10 seconds,,
0.25"(6.35mm)from case
0.159(4.05)
0.138(3.50)
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
0.053(1.34)
0.047(1.20)
MECHANICAL DATA
Case: JEDEC TO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08ounce, 2.24 grams
0.410(10.41)
0.390(9.91)
TO-220AB
0.161(4.10)
0.147(3.74)
DIA
0.114(2.90)
0.102(2.60)
0.185(4.70)
0.175(4.44)
0.283(7.20)
0.244(6.20)
0.055(1.39)
0.045(1.14)
PIN
1 23
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.095(2.41)
0.208(5.28)
0.192(4.88)
1.161(29.50)
1.106(28.10)
0.560(14.22)
0.516(13.10)
0.114(2.90)
0.098(2.50)
0.023(0.58)
0.014(0.35)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Per leg
Total device
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 20.0 A
Maximum instantaneous reverse T C =25 C
current at rated DC blocking
voltage(Note 1)
TC =125 C
Typical thermal resistance (Note 2)
Symbols
VRRM
VRMS
VDC
I(AV)
IFSM
MBR MBR MBR
MBR
MBR
MBR MBR MBR
MBR
2020CT 2030CT 2040CT 2050CT 2060CT 2080CT 20100CT 20150CT 20200CT
20
30
40
50
60
80
100 150
200
14
21
28
35
42
56
70
105
140
20
30
40
50
60
80
100 150
200
10.0
20.0
200.0
VF
IR
R JC
0.60
30
0.75
0.2
3.0
0.85
50
0.90 0.95
Operating junction temperature range
Storage temperature range
TJ
TSTG
-65 to+150
-65 to+150
Units
Volts
Volts
Volts
Amps
Amps
Volts
mA
C/W
C
C
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance from junction to case
1
GAOMI XINGHE ELECTRONICS CO.,LTD.                              WWW.SDDZG.COM    

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