Q62702-F1377 查看數據表（PDF） - Siemens AG
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Q62702-F1377 Datasheet PDF : 8 Pages
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NPN Silicon RF Transistor
• For low-power amplifiers in mobile
communication systems (pager) at collector
currents from 0.2 to 2.5mA
fT = 7GHz
• F = 2.1dB at 900MHz
BFP 180
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 180 RDs
Q62702-F1377
1=C 2=E 3=B 4=E
Package
SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 124 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
8
10
10
2
4
0.5
30
150
- 65 ... + 150
- 65 ... + 150
≤ 875
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Nov-22-1996
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